AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance

• DOI: 10.35848/1882-0786/adc77d
• Publication Date: 2025-03-31T23:16:09Z
• Authors: Quan Dai; Qingru Wang; Xinkun Zhang; Gaofei Zhi; Xinlu Yang; Yu Zhou; Qian Li; Xiaoning Zhan; Xin Chen; Yaozong Zhong; Jianxun Liu; Qian Sun; Hui Yang

Abstract In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I–V measurements. With an optimized epitaxial design, a multi-channel structure with a 2DEG density of 0.65 × 1013 cm−2 presents a maximum electron velocity of 1.57 × 107 cm s−1 at 100 kV cm−1, which is 2.4 times higher than that of conventional single-channel structure. This multi-channel structure with an ultra-low 2DEG density is highly suitable for enhanced-mode FinFETs, offering significant potential for radio-frequency mobile terminal applications, such as 5G handsets.