Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

• DOI: 10.36227/techrxiv.22570033
• Publication Date: 2023-04-10T16:05:52Z
• Authors: Yi Xiao; Shan Deng; Zijian Zhao; Zubair Faris; Yixin Xu; Tzu-Jung Huang; Vijaykrishnan Nar...; Kai Ni
• Keywords: Ferroelectric RAM; Non-Volatile Memory; Ferroelectric capacitor; Memory cell

<p>In this work, we propose a 2TnC ferroelectric random access memory (FeRAM) cell design to realize the quasi- nondestructive readout (QNRO) of polarization (PFE) in capacitor, which can relax endurance requirement thin film and exploits benefits both FeRAM FET (FeFET). We demonstrate that: i) QNRO sensing PFE is conducted successfully experiment with ON/OFF ratio (ION/IOFF)>103, ION>10 μA, read endurance>106 cycles, by 106x; ii) optimization performance be realized tuning metal-ferroelectric-metal capacitor (MFM) transistor area threshold voltage (V TH); iii) proposed structure 3D-compatible, enabling integration highly dense solution; iv) also enables compute-in-memory (CIM) applications FeRAM, has not been widely explored. With technology, storage memory-centric computing enable</p>