Terahertz emission from GaInAs p-i-n diodes photoexcited by femtosecond laser pulses

• DOI: 10.3952/physics.v55i4.3223
• Publication Date: 2016-01-11T22:58:02Z
• Authors: Ignas Nevinskas; Sandra Stanionytė; Vaidas Pačebutas; Arūnas Krotkus
• Keywords: Photocurrent

Lattice-matched GaInAs p - i n diodes of different -region thicknesses have been MBE grown on -type InP (100) and (111) crystallographic orientation substrates. It has found that terahertz emission from such structures when illuminated with femtosecond laser pulses can be more efficient than the known to date best surface emitter -InAs. The explanation generation mechanism is based ultrafast photocurrent effects. Anisotropic transient photocurrents causing 3 ϕ azimuthal angle dependence are observed in sample substrate. These allow covering a technologically important 1.55 μm range may provide controllability compactness THzTDS system biased an external voltage source.