Sensitivity of D_it Extraction at the SiO₂/SiC Interface Using Quasi-Static Capacitance-Voltage Measurements

• DOI: 10.4028/p-fnktjf
• Publication Date: 2022-05-31T15:18:20Z
• Authors: Manuel Belanche G...; Piyush Kumar; Judith Woerle; Roger Stark; Ulrike Grossner
• Keywords: 0103 physical sciences; 01 natural sciences

In this work, we compare different quasi-static capacitance-voltage measurement systems by analyzing 4H-SiC n-type MOS capacitors and studying the influence of systematic errors when extracting interface trap density (D it ). We show that extracted D strongly depends on calculation surface potential due to variations integration constant. addition, ramp-rate during is identified as a sensitive parameter whose noise level amplified in extraction.