Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)

• DOI: 10.4028/www.scientific.net/msf.711.235
• Publication Date: 2012-02-10T10:16:49Z
• Authors: Bilal Jabakhanji; Nicolas Camara; Alessandra Caboni; Christophe Consejo; Benoit Jouault; Philippe Godignon; Jean Camassel
• Keywords: magneto transport; Raman spectroscopy; 02 engineering and technology; [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]; 0210 nano-technology; epitaxial graphene; 7. Clean energy

We present the growth and characterization of epitaxial Graphene on the (000-1) and (11-20) planes. In both cases, the growth was carried out in a RF furnace, by implementing our technique of confined atmosphere, covering the SiC substrate with a graphitic cap during the growth. The grown material was investigated by means of AFM, SEM, Raman spectroscopy and magneto transport. Contrary to the (0001) face, in both faces (000-1) and (11-20), almost free standing Graphene monolayers of very high quality are grown. These Graphene sheet are uniform, continuous, almost strain-free and lightly doped. In both faces, Hall bars were fabricated and Shubnikov-de Haas oscillations typical of Graphene, as well as the Half Integer Quantum Hall Effect are observed.