Sensor of Current or Magnetic Field Based on Magnetoresistance Effect in (La<sub>0.7</sub>Ca<sub>0.3</sub>)<sub>0.8</sub>Mn<sub>1.2</sub>O<sub>3</sub> Manganite Film
Current sensor
Manganite
Ampere
DOI:
10.4028/www.scientific.net/ssp.154.157
Publication Date:
2009-09-01T06:21:47Z
AUTHORS (9)
ABSTRACT
The main objective of the performed investigations was to enhance sensitivity a current sensor weak changes magnetic field. New design based on magnetoresistance effect – MRE (MRE = (RH - R0)/R0 , where RH is resistance in field and R0 without field) developed. produced form an annular magnet with gap, which (La0.7Sr0.3)0.8Мn1.2О3 manganite film possessing large negative inserted. Nominal controllable electric circuit can change from few tenths parts ampere hundred amperes. limit detectable value depends size gap magnet. operation time at overload short less than 0.3 sec. These magnetoresistors are thermally stable over temperature range (- 50 ° С) (+ С). Proposed sensors be applied many electrical arrangements devices.
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