Demonstration of Enhanced Performance in Si Solar Cell with Large Scale Quasi-Ordered Nanohole Texture

Texture (cosmology)
DOI: 10.4229/27theupvsec2012-1ao.8.5 Publication Date: 2012-10-26
ABSTRACT
Large scale silicon nanohole textured solar cell with radial p-n junctions was demonstrated via a low cost, maskless method with laser annealed silver particle catalytic wet etching and phosphoric acid diffusion. Under 1 sun AM1.5G illumination, a Si nanohole solar cell exhibited an open-circuit voltage of 558 mV, a short-circuit current density of 29.1 mA/cm2, and a remarkable power conversion efficiency of 9.5%. The quasi-random nanohole geometry demonstrates a low cost and viable method for enhanced light absorption and performance of solar energy conversion. The nanohole texturing has been studied as a good anti-reflection technique for thin film solar cell. The device fabrication techniques used are transferrable to thin film photovoltaic applications.<br/>27th European Photovoltaic Solar Energy Conference and Exhibition; 63-66<br/>
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