beyond 22 large area n type silicon solar cells with front laser doping and a rear emitter

• DOI: 10.4229/eupvsec20152015-2co.3.6
• Publication Date: 2015-01-01
• Authors: Jozef Szlufcik; Loic Tous; Filip Duerinckx; Thomas Söderström; Yu Yao; Richard Russell; Monica Aleman; Michael Haslinger; Aashish Sharma; Emanuele Cornagli...; Jan Deckers; Joachim John; Angel Uruena De C...
• Keywords: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY; 02 engineering and technology; 0210 nano-technology; 7. Clean energy; Silicon Solar Cell Improvements

31st European Photovoltaic Solar Energy Conference and Exhibition; 410-413<br/>We report on the progress of imec’s n-PERT (Passivated Emitter, Rear Totally diffused) rear junction solar cells. Selective laser doping (LD) has been introduced in the flow replacing the laser ablation step (LA) to improve the front surface field and reduce the recombination current in the contact area. Simplifications have been introduced towards a more industrial annealing sequence, by replacing all expensive forming gas steps with a belt furnace annealing (BFA). The passivation quality of this process has been evaluated on test structures with doped surfaces. Applying this process to our rear junction design, 22.5% efficient cells have been measured on 6”- commercial Czochralski (Cz)-Si. This result has been independently confirmed by ISE CalLab. Smart Wire Connection Technology (SWCT) has been applied to our cells showing a power output over 5 W in a 1-cell laminate, which could be translated into a 60-cell module power over 300 W.<br/>