Method for Transferring High-Mobility CVD-Grown Graphene with Perfluoropolymers

• DOI: 10.48550/arxiv.1606.08802
• Publication Date: 2016-01-01
• Authors: Li, Jianan; Hsu, Jen-Feng; Lee, Hyungwoo; Tripathi, Shivendra; Guo, Qing; Chen, Lu; Huang, Mengchen; Dhingra, Shonali; Lee, Jung-Woo; Eom, Chang-Beom; Irvin, Patrick; Levy, Jeremy; D'Urso, Brian
• Keywords: Condensed Matter - Materials Science; Condensed Matter - Mesoscale and Nanoscale Physics; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; 01 natural sciences; 0105 earth and related environmental sciences

6 pages, 4 figures<br/>The transfer of graphene grown by chemical vapor deposition (CVD) using amorphous polymers represents a widely implemented method for graphene-based electronic device fabrication. However, the most commonly used polymer, poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits the mobility. Here we report a method for graphene transfer and patterning that employs a perfluoropolymer---Hyflon---as a transfer handle and to protect graphene against contamination from photoresists or other polymers. CVD-grown graphene transferred this way onto LaAlO$_3$/SrTiO$_3$ heterostructures is atomically clean, with high mobility (~30,000 cm$^2$V$^{-1}$s$^{-1}$) near the Dirac point at 2 K and clear, quantized Hall and magneto-resistance. Local control of the LaAlO$_3$/SrTiO$_3$ interfacial metal-insulator transition---through the graphene---is preserved with this transfer method. The use of perfluoropolymers such as Hyflon with CVD-grown graphene and other 2D materials can readily be implemented with other polymers or photoresists.<br/>