Single-defect Memristor in MoS$_2$ Atomic-layer

• DOI: 10.48550/arxiv.2002.01574
• Publication Date: 2020-01-01
• Authors: Saban M. Hus; Ruijing Ge; Po‐An Chen; Meng‐Hsueh Chiang; Gavin Donnelly; Wonhee Ko; Fumin Huang; Liangbo Liang; An‐Ping Li; Deji Akinwande
• Keywords: Memristor; Non-Volatile Memory; Nanomaterials; Atomic units; Neuromorphic engineering; Characterization

Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged one of the most important components ongoing development high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, unexpected discovery atomic monolayers transitional metal dichalcogenide sandwich structures added a new dimension interest owing to prospects size scaling associated benefits. However, origin switching mechanism sheets remains uncertain. Here, using monolayer MoS$_2$ model system, atomistic imaging spectroscopy reveal that substitution into sulfur vacancy results non-volatile change resistance. The experimental observations are corroborated by computational studies defect electronic states. These remarkable findings provide an understanding on open direction precision engineering, down single defect, for achieving optimum performance metrics including memory density, energy, speed, reliability nanomaterials.