Spin-photon coupling for atomic qubit devices in silicon

• DOI: 10.48550/arxiv.2105.02904
• Publication Date: 2022-05-04
• Authors: Edyta N. Osika; Sacha Kocsis; Yu-Ling Hsueh; Serajum Monir; Cassandra Chua; Hubert Lam; Benoit Voisin; Michelle Y. Simmons; Sven Rogge; Rajib Rahman
• Keywords: 0301 basic medicine; 0303 health sciences; 03 medical and health sciences; Condensed Matter - Mesoscale and Nanoscale Physics; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); FOS: Physical sciences

Electrically addressing spin systems is predicted to be a key component in developing scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manipulation and long-distance entanglement via microwave photons. However, single spins have no electric dipole, and therefore a spin-orbit mechanism must be integrated in the qubit design. Here, we propose to couple microwave photons to atomically precise donor spin qubit devices in silicon using the hyperfine interaction intrinsic to donor systems and an electrically-induced spin-orbit coupling. We characterise a one-electron system bound to a tunnel-coupled donor pair (1P-1P) using the tight-binding method, and then estimate the spin-photon coupling achievable under realistic assumptions. We address the recent experiments on double quantum dots (DQDs) in silicon and indicate the differences between DQD and 1P-1P systems. Our analysis shows that it is possible to achieve strong spin-photon coupling in 1P-1P systems in realistic device conditions without the need for an external magnetic field gradient.