Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films

• DOI: 10.48550/arxiv.2204.06880
• Publication Date: 2022-05-02
• Authors: Mizuki Ohno; Susumu Minami; Yusuke Nakazawa; Shin Sato; Markus Kriener; Ryotaro Arita; Masashi Kawasaki; Masaki Uchida
• Keywords: Condensed Matter - Strongly Correlated Electrons; Condensed Matter - Materials Science; Strongly Correlated Electrons (cond-mat.str-el); Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; 01 natural sciences; 0104 chemical sciences

13 pages, 4 figures<br/>Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and control of their anomalous Hall effect by film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating clear energy dependence of the intrinsic AHE.<br/>