Enhancing All-Optical Switching of Magnetization by He Ion Irradiation

• DOI: 10.48550/arxiv.2207.07766
• Publication Date: 2022-10-24
• Authors: Li, Pingzhi; van der Jagt, Joh...; Beens, Maarten; Hintermayr, Julian; Verheijen, Marcel A.; Bruikman, René; Barcones, Beatriz; Juge, Roméo; Lavrijsen, Reinoud; Ravelosona, Dafiné; Koopmans, Bert
• Keywords: Condensed Matter - Materials Science; Condensed Matter - Mesoscale and Nanoscale Physics; cond-mat.mes-hall; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; Optical computing, Depth profiling techniques, Magnetic hysteresis, Magnetic memories, Magnetooptical effects, Spintronics; 02 engineering and technology; 0210 nano-technology; 7. Clean energy; cond-mat.mtrl-sci

All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion irradiation to enhance single pulse AOS of Co/Gd bilayer-based synthetic ferrimagnets. The intermixing of the constituent magnetic layers by He ion irradiation was both numerically simulated and experimentally verified. We theoretically modeled the effects of intermixing on AOS using the layered microscopic 3-temperature model and found that AOS is enhanced significantly by breaking the pristine Co/Gd interface through intermixing. Following this notion, we studied the threshold fluence of AOS as a function of He ion irradiation fluence. We found that the AOS threshold fluence can be reduced by almost 30%. Our study reveals the control of AOS by He ion irradiation, which opens up an industrially compatible approach for local AOS engineering.