Gate control of Mott metal-insulator transition in a 2D metal-organic framework

• DOI: 10.48550/arxiv.2305.14983
• Publication Date: 2023-01-01
• Authors: Benjamin Löwe; B.O. Field; Jack Hellerstedt; Julian Ceddia; H. L. Nourse; B. J. Powell; Nikhil V. Medhekar; Agustin Schiffrin
• Keywords: Mott insulator; Mott transition

Electron-electron interactions in materials lead to exotic many-body quantum phenomena including Mott metal-insulator transitions (MITs), magnetism, spin liquids, and superconductivity. These phases depend on electronic band occupation can be controlled via the chemical potential. Flat bands two-dimensional (2D) layered with a kagome lattice enhance correlations. Although theoretically predicted, correlated-electron insulating monolayer 2D metal-organic frameworks (MOFs) structure have not yet been realised experimentally. Here, we synthesise MOF insulator. Scanning tunnelling microscopy (STM) spectroscopy reveal energy gap of ~200 meV, consistent dynamical mean field theory predictions Combining template-induced (via work function variations substrate) STM probe-induced gating, locally tune electron population induce MITs. findings enable technologies based electrostatic control MOFs.