A high-$κ$ wide-gap layered dielectric for two-dimensional van der Waals heterostructures

• DOI: 10.48550/arxiv.2307.13431
• Publication Date: 2023-01-01
• Authors: Aljoscha Söll; Edoardo Lopriore; Asmund Ottesen; Jan Luxa; Gabriele Pasquale; Jiří Šturala; František Hájek; Vítězslav Jarý; David Sedmidubský; Kseniia Mosina; András Kis; Zdeněk Sofer
• Keywords: High-κ dielectric

Van der Waals heterostructures of two-dimensional materials have opened up new frontiers in condensed matter physics, unlocking unexplored possibilities electronic and photonic device applications. However, the investigation wide-gap high-$κ$ layered dielectrics for devices based on van structures has been relatively limited. In this work, we demonstrate an easily reproducible synthesis method rare earth oxyhalide LaOBr, exfoliate it as a 2D material with measured static dielectric constant $ε_{0, \perp} \simeq 9$ wide bandgap 5.3 eV. Furthermore, our research demonstrates that LaOBr can be used field-effect transistors high performance low interface defect concentrations. Additionally, proves to attractive choice electrical gating excitonic materials. Our work versatile realization functionality systems environments.