In-plane Hall effect in rutile oxide films induced by the Lorentz force

• DOI: 10.48550/arxiv.2308.06651
• Publication Date: 2023-01-01
• Authors: Yongwei Cui; Zhaoqing Li; Hao Chen; Yue Chen; Yunzhuo Wu; Ke Pei; Tong Wu; Nian Xie; Renchao Che; Xuepeng Qiu; Yi Liu; Zhe Yuan; Yizheng Wu
• Keywords: Rutile; Lorentz force

The conventional Hall effect is linearly proportional to the field component or magnetization perpendicular a film. Despite increasing theoretical proposals on in-plane in various special systems induced by Berry curvature, such an unconventional has only been experimentally reported Weyl semimetals and heterodimensional superlattice. Here, we report unambiguous experimental observation of antisymmetric planar (APHE) with respect magnetic centrosymmetric rutile RuO2 IrO2 single-crystal films. measured resistivity found be applied along particular crystal axis independent current direction temperature. Both observations calculations confirm that APHE oxide films Lorentz force. Our findings can generalized ferromagnetic materials for discovery anomalous effects quantum magnetization. In addition significantly expanding knowledge effect, this work opens door explore new members family.