Coherent Tunneling and Strain Sensitivity of an All Heusler Alloy Magnetic Tunneling Junction: A First-Principles Study

• DOI: 10.48550/arxiv.2309.09755
• Publication Date: 2023-01-01
• Authors: Joydipto Bhattach...; Ashima Rawat; Ranjit Pati; Aparna Chakrabarti; Ravindra Pandey
• Keywords: Tunnel magnetoresistance; Spin valve

Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in realm spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi level, ultra-low Gilbert damping, and Curie temperature. In this comprehensive study, employing density functional theory, we delve into stability electron transport properties a magnetic tunneling junction (MTJ) comprising Co$_2$MnSb/HfIrSb interface. Utilizing standard model given by Julliere, estimate tunnel magnetoresistance (TMR) ratio heterojunction under external electric field, revealing significantly TMR (500%) that remains almost unaltered for field magnitudes up 0.5 V/A. In-depth investigation K-dependent majority transmissions uncovers occurrence coherent Mn-Mn/Ir interface, particularly when spacer layer beyond certain thickness is employed. Additionally, explore impact bi-axial strain on MTJ varying in-plane lattice constants between -4% +4%. Our spin-dependent transmission calculations demonstrate interface manifests strain-sensitive both compressive tensile strain, yields three-fold increase conditions. These compelling outcomes place Co2MnSb/HfIrSb among highly promising candidates nanoscale devices, emphasizing potential significance system advancement field.