Knot Architecture for Biocompatible and Semiconducting Two-Dimensional Electronic Fibre Transistors

• DOI: 10.48550/arxiv.2311.02545
• Publication Date: 2023-01-01
• Authors: Tian Carey; Jack Maughan; Luke Doolan; Eoin Caffrey; James Garcia; Shixin Liu; Harneet Kaur; Cansu Ilhan; Shayan Seyedin; Jonathan N. Coleman
• Keywords: Molybdenum disulfide; Tungsten diselenide; Biocompatible material; Tungsten disulfide

In recent years, the rising demand for close interaction with electronic devices has led to a surge in popularity of wearable gadgets. While gadgets have generally been rigid due their utilisation silicon-based technologies, flexible semiconducting fibre-based transistors will be needed future wearables as active sensing components or within microprocessors manage and analyse data. Two-dimensional (2D) flakes are yet investigated fibre but could offer route toward high-mobility, biocompatible devices. Here we report electrochemical exfoliation two-dimensional tungsten diselenide (WSe2) molybdenum disulfide (MoS2). The high aspect ratio (>100) achieves aligned conformal flake-to-flake junctions on polyester fibres enabling mobilities ~ 1 cm^2 V^-1 s^-1 current on/off ratio, Ion/Ioff 10^2 - 10^4. Furthermore, cytotoxic effects MoS2 WSe2 human keratinocyte cells found biocompatible. As an additional step, create unique transistor knot architecture by leveraging diameter establish length channel, facilitating scale down channel dimensions (100 {\mu}m) utilise it make hair that {\mu} 15 s^-1.