Electrical 180o switching of N\'eel vector in spin-splitting antiferromagnet

• DOI: 10.48550/arxiv.2401.17608
• Publication Date: 2024-01-31
• Authors: Lei Han; Xizhi Fu; Rui Peng; Xingkai Cheng; Jiankun Dai; Liangyang Liu; Yidian Li; Yichi Zhang; Wenxuan Zhu; Hua Bai; Yongjian Zhou; Shixuan Liang; Chong Chen; Qian Wang; Xianzhe Chen; Luyi Yang; Yang Zhang; Cheng Song; Junwei Liu; Feng Pan

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of N\'eel vector is a long-term goal for developing electrical-controllable with opposite vectors as binary "0" "1". However, the state-of-art mechanisms long been limited 90o or 120o vector, which unavoidably require multiple writing channels contradicts integration. Here, we propose deterministic mechanism based on spin-orbit torque asymmetric energy barrier, experimentally achieve spin-splitting antiferromagnet Mn5Si3. Such read out by vector-induced anomalous Hall effect. Based our readout methods, fabricate an device high low resistance states accomplishes robust write cycles. Besides fundamental advance, work promotes practical devices antiferromagnet.