Extended Hubbard corrected tight-binding model for rhombohedral few-layer graphene

• DOI: 10.48550/arxiv.2403.00530
• Publication Date: 2024-03-01
• Authors: Dongkyu Lee; Woo-Il Yang; Young‐Woo Son; Jeil Jung
• Keywords: Trigonal crystal system; Tight binding

Rhombohedral multilayer graphene (RnG) featuring partially flat bands has emerged as an important platform to probe strong Coulomb correlation effects. Theoretical consideration of local electron-electron interactions are particular importance for electronic eigenstates with a tendency spatially localize. We present method incorporate mean-field interaction corrections in the tight-binding hopping parameters band Hamiltonian within extended Hubbard model that incorporates ab initio estimates on-site ($U$) and inter-site ($V$) $\pi$ RnG. Our Coulomb-interaction renormalized structures feature electron-hole asymmetry, flatness, gap, anti-ferromagnetic ground states excellent agreement available experiments $n \geq 4$. reinterpret putative gaps proposed $n=3$ systems terms shifting electron hole density peaks depending on range models.