Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor

• DOI: 10.48550/arxiv.2403.11137
• Publication Date: 2024-03-17
• Authors: Feng Wang; Wangqiang Shen; Yuan Shui; Jun Chen; Huaiqiang Wang; Rui Wang; Yuyuan Qin; Xuefeng Wang; Jianguo Wan; Minhao Zhang; Xing Lü; Tao Yang; Fengqi Song
• Keywords: Magnetism; Non-Volatile Memory

Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging spin bistability magnetic atom under scanning tunnelling microscope. However, it rarely applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization electrically controlled Zeeman effect in Dy@C84 single-molecule thus revealing transition moment from 3.8 {\mu}B 5.1 ground-state GN at electric field strength 3-10 MV/cm. The consequent magnetoresistance significantly increases 600% 1100% resonant tunneling point. Density functional theory calculations further corroborate our nonvolatile single-atom magnetism, stability emanates energy barrier 92 meV atomic relaxation. These results highlight potential using endohedral metallofullerenes high-temperature, high-stability, high-speed, compact storage.