Precision measurements on Si-

• DOI: 10.48550/arxiv.2404.06226
• Publication Date: 2024-04-09
• Authors: J. Karls; H. Cederquist; N. D. Gibson; Jon Grumer; MingChao Ji; I. Kardasch; D. Leimbach; Paul Martini; José E. Navarro N...; Rachel Poulose; Stefan Rosén; H. T. Schmidt; A. Simonsson; Henning Zettergren; Dag Hanstorp
• Keywords: Atomic Physics (physics.atom-ph); FOS: Physical sciences; Physics - Atomic Physics

High-precision measurements of the electron affinities (EA) three stable isotopes silicon, $^{28}$Si, $^{29}$Si and $^{30}$Si, have been performed at cryogenic electrostatic ion-beam storage ring DESIREE. The quantum states ions were manipulated using laser depletion, photodetached by photodetachment threshold spectroscopy. These EA values are first reported for $^{29}$Si$^-$ $^{30}$Si$^-$ provide a reduced uncertainty $^{28}$Si$^-$. resulting EAs $EA(^{28}$Si$) = 1.38952201(17)$ eV, $EA(^{29}$Si$) 1.38952172(12)$ eV 1.38952078(12)$ with corresponding isotope shifts $IS(^{29-28}$Si$) 0.29(16)$ micro $IS(^{30-28}$Si$) 1.23(16) $ eV. In addition to these measurements, resolution signal-to-background level was sufficient reveal hyperfine structure splitting in isotope, which we report be $1.8(4)