Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)

• DOI: 10.48550/arxiv.2406.19469
• Publication Date: 2024-06-27
• Authors: Connor P. Dempsey; Jason T. Dong; I. Villar Rodriguez; Y Gul; Sangam Chatterjee; M. Pendharkar; S. N. Holmes; M. Pepper; C. J. Palmstrøm
• Keywords: Mobilities; Strain (injury)

InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and potential role creating topologically nontrivial hybrid heterostructures. The highest mobility QWs limited by interfacial roughness scattering alloy disorder the cladding buffer layers. Increasing QW thickness has been shown to reduce effect of both these mechanisms. However, current state-of-the-art As-based barrier layers, critical is $\leq7$ nm. In this report, we demonstrate use strain compensation techniques InGaAs layers extend well beyond limit. We induce tensile reducing concentration from In$_{0.81}$Ga$_{0.19}$As In$_{0.70}$Ga$_{0.30}$As observe changes maximum achievable mobility. peak electron at 2 K $1.16\times10^6$ cm$^2/$Vs, a carrier density $4.2\times10^{11}$ /cm$^2$. Additionally, study lifetime Rashba spin splitting device as parameters determine if structures can be used devices.