Anisotropic Schottky-barrier-height in high-symmetry 2D WSe$_2$: Momentum-space anisotropy

• DOI: 10.48550/arxiv.2502.11005
• Publication Date: 2025-02-16
• Authors: Nuo Xu; Xiaolin Zhao; Meng-Xue Ren; Kexin Hou; Xiangmeng Lv; Ruining Wang; Xingqiang Shi; Jianglong Wang
• Keywords: Condensed Matter - Materials Science; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences

It is usually supposed that only low-symmetry two-dimensional (2D) materials exhibit anisotropy, here we show high-symmetry 2D semiconductors can significant anisotropy in momentum space due to the band structure k-space. The basic reason different k-points Brillouin zone have symmetry. Using semiconductor WSe$_2$ as example, construct lateral heterostructures with zigzag and armchair connections metal NbSe$_2$, electronic contact characteristics of these two are analyzed. found both p-type Schottky barrier height (SBH) but sizes SBH very (of 0.03 eV 0.50 eV), mainly because band-edge energies along mutually perpendicular directions space. There factors contributing anisotropy: one interface other edge WSe$_2$. Since structures give a difference potential change by less than 0.1 eV, variation ~0.47 from momentum-space. So, may highly anisotropic states this affects transport properties. Our current work extends research field material high real-space symmetry, thus greatly expands candidate for studies provides new guidance optimizing performance devices via controlling directions.