Total dose effects on a deep-submicron SOI technology for Monolithic Pixel Sensor Development

• DOI: 10.5170/cern-2009-006.591
• Publication Date: 2009-01-01
• Authors: MATTIAZZO, SERENA; BATTAGLIA MARCO; BISELLO, DARIO; CONTARATO DEVIS; DENES PETER; GIUBILATO, PIERO; PANTANO, DEVIS; POZZOBON, NICOLA; TESSARO MARIO; WYSS, JEFFERY

We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.