Quantum Transport Simulations of CNTFETs: Performance Assessment and Comparison Study with GNRFETs

• DOI: 10.5573/jsts.2014.14.5.615
• Publication Date: 2014-11-28T16:08:01Z
• Authors: Wei Wang; Huan Wang; Xueying Wang; Na Li; Changru Zhu; Guangran Xiao; Xiao Yang; Lu Zhang; Ting Zhang
• Keywords: Subthreshold conduction; Ballistic conduction

In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on non-equilibrium Green’s functions (NEGF) solved self - consistently with Poisson’s equations. The calculated results show that CNTFETs exhibit superior compared graphene nanoribbon (GNRFETs), such as better control ability gate channel, higher drive current lower subthreshold leakage current, subthreshold-swing (SS). Due to larger bandstructure-limited velocity in CNTFETs, ballistic present limit than Si MOSFETs. parameter effects are also investigated. addition, enhance immunity against short channel (SCE), hetero material (HMGCNTFETs) have been proposed, a detailed numerical simulation analyze performances scaling down, conclude HMG-CNTFETs can meet ITRS’10 requirements CNTs.