A Wide Output Range, High Power Efficiency Reconfigurable Charge Pump in 0.18 mm BCD process

• DOI: 10.5573/jsts.2014.14.6.777
• Publication Date: 2015-01-21T21:23:53Z
• Authors: Hyung-Gu Park; Jeong-A Jang; Sung Hun Cho; Juri Lee; Sang-Yun Kim; Honey Durga Tiwari; Young Gun Pu; Keum Cheol Hwang; Youngoo Yang; Kang-Yoon Lee; Munkyo Seo
• Keywords: Electrical efficiency; Power MOSFET; High Voltage

This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the resistances. The is composed of 4-stages and its configuration automatically changes based on required voltage level. In order to keep over internal blocks are activated or deactivated by clock driver in minimizing switching loss due On Off operations MOSFET. addition, leakage current paths each mode blocked compensate variation respect range. chip fabricated using 0.18 ㎜ BCD process MOSFET options, die area 1870 x 1430 ㎜. consumption itself 79.13 ㎽ when 415.45 at mode, while it 20.097 89.903 low mode. measured maximum 84.01 %, from 7.43 V 12.23 V.