Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits

• DOI: 10.5573/jsts.2015.15.1.131
• Publication Date: 2015-03-23T07:11:48Z
• Authors: Wei Wang; Min Xu; Jichao Liu; Na Li; Ting Zhang; Sitao Jiang; Lu Zhang; Huan Wang; Jian Gao
• Keywords: Power–delay product

An extensive investigation of the influence gate engineering on CNTFET switching, high frequency and circuit level performance has been carried out. At device level, effects switching characteristics for have theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material CNTFET(HMG CNTFET) structure can significantly reduce leakage current, enhance control ability channel, more suitable use in low power circuits. HSPICE with look up table(LUT) based Verilog A models, parameters circuits calculated optimum combinations ФM1/ФM2/ФM3 concluded terms consumption, average delay, stability, energy consumption delay product(PDP). We show that, compared to traditional circuit, one HMG better (SNM, energy, PDP). In addition, results also illustrate consistent trend power, PDP respect transistor size, indicating CNTFETs promising technology. Our may be useful designing optimizing devices