Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm

• DOI: 10.7567/1882-0786/aaf788
• Publication Date: 2019-01-04T09:14:29Z
• Authors: Frank Mehnke; Luca Sulmoni; Martin Guttmann; Tim Wernicke; Michael Kneissl
• Keywords: Ultraviolet; Quantum Efficiency

The development of ultraviolet AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) in the wavelength range between 239 and 217 nm is presented. effects aluminum composition MQW active region underlying AlxGa1−xN:Si current spreading layer on emission characteristics operating voltages are investigated. A strong reduction output power observed with decreasing which partly attributed to absorption within AlxGa1−xN:Si. Additionally, a reduced carrier injection efficiency identified as root cause for wavelength. Emission powers at dc 20 mA 310 0.15 μW have been achieved LEDs nm. maximum pulsed mode operation these ranged 4.6 mW 3.6 μW, respectively.