Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures

• DOI: 10.7567/1882-0786/ab1ab8
• Publication Date: 2019-04-18T22:15:52Z
• Authors: Kenjiro Uesugi; Yusuke Hayashi; Kanako Shojiki; Hideto Miyake
• Keywords: Template

Abstract Combination of sputter deposition and high-temperature annealing is a promising technique for preparing AlN templates with low threading dislocation density (TDD) at lower film thickness compared to those prepared by the conventional metalorganic vapor phase epitaxy. However, cracking films during critical issue. In this study, we controlled residual stress sputter-deposited modifying sputtering conditions. Consequently, occurrence was effectively suppressed. By optimizing fabricating conditions, TDD 2.07 × 10 8 cm −2 achieved template 480 nm.