Modulation and optoelectronic properties of GaN-based light-emitting diodes on GaN template

• DOI: 10.7567/apex.11.122101
• Publication Date: 2018-11-07T12:14:31Z
• Authors: Shan Lin; Haicheng Cao; Jing Li; Xuejiao Sun; Huixin Xiu; Lixia Zhao
• Keywords: Modulation (music); Indium gallium nitride

We investigated the modulation responses and optoelectronic properties of light-emitting diodes (LEDs) grown on free-standing (0001) GaN. These LEDs have a larger bandwidth than those sapphire at higher current density, maximum −3 dB 510 MHz was achieved, which is 1.7 times compared to sapphire. In addition, due lower substrate temperature, there may be an increase in indium that incorporated into active region as well point defects GaN, will influence properties.