Formation of Minibands on Superlattice Structure with Periodically Arranged δ-Doped Nitrogen into GaAs

• DOI: 10.7567/apex.6.041002
• Publication Date: 2013-04-15T03:32:28Z
• Authors: Kengo Sumiya; Masato Morifuji; Yoshifumi Oshima; Fumitaro Ishikawa
• Keywords: 02 engineering and technology; 0210 nano-technology

Using molecular beam epitaxy, we fabricate a superlattice structure having periodically arranged δ-doped nitrogen within GaAs. X-ray diffraction indicates the formation of regularly 0.1 ML certain dispersion every 3.7 nm, multilayered up to 10 periods. Optical transition energies obtained from photoreflectance reflect number That suggests minibands in short-period GaAsN/GaAs quantum wells, as well dispersed distribution about ∼7 also predicted transmission electron microscopy.