Effect of Nitridation of Si Nanoparticles on the Performance of Quantum-Dot Sensitized Solar Cells

• DOI: 10.7567/jjap.51.01ad01
• Publication Date: 2013-12-21T12:14:45Z
• Authors: Giichiro Uchida; Kosuke Yamamoto; Muneharu Sato; Yuki Kawashima; Kenta Nakahara; Kunihiro Kamataki; Naho Itagaki; Kazunori Koga; Masaharu Shiratani
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH4/H2 and N2 gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.