Correlation between thermal hysteresis width and broadening of metal–insulator transition in Cr- and Nb-doped VO2films

• DOI: 10.7567/jjap.53.071102
• Publication Date: 2014-06-16T16:00:51Z
• Authors: Kenichi Miyazaki; Keisuke Shibuya; Megumi Suzuki; Hiroyuki Wado; Akihito Sawa
• Keywords: Transition temperature; Hysteresis; Metal–insulator transition; Temperature coefficient

We investigated the effects of Cr and Nb doping on metal–insulator transition (MIT) single-oriented VO2 films deposited Al2O3 substrates. The MIT temperature (TMI) increased with trivalent doping, whereas it decreased pentavalent doping. coefficient resistance (TCR) thermal hysteresis width (ΔTMI) were suppressed by was about twice as effective for decreasing TCR ΔTMI. found that maximum ΔTMI doped have a correlation lattice constant irrespective elements, suggesting deformation caused metal-ion is involved in decreases There also an apparent between films. present findings suggest combination other techniques such strain control required to achieve nonhysteretic large