Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

• DOI: 10.7567/jjap.55.03cb01
• Publication Date: 2016-01-07T10:13:28Z
• Authors: Taizoh Sadoh; Jong-Hyeok Park; Rikuta Aoki; Masanobu Miyao
• Keywords: Crystal (programming language); Flexible Electronics

Abstract Orientation-controlled large-grain (≥10 µm) crystal, i.e., quasi-single Ge-rich (≥50%) SiGe on insulator grown at low temperatures (≤300 °C) are desired for realization of high-performance flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. This enables formation (111)-oriented Si 1− x Ge ( ≥ 0.5) crystals insulating substrates (300 °C). The surface layers have uniform lateral composition profiles. By this technique, crystal plastic sheets is demonstrated. will be useful to realize