Photovoltaic properties of Cu2ZnSnS4 cells fabricated using ZnSnO and ZnSnO/CdS buffer layers

• DOI: 10.7567/jjap.55.112302
• Publication Date: 2016-10-19T09:15:57Z
• Authors: Shin Tajima; Mitsutaro Umehara; Takahiro Mise
• Keywords: Buffer (optical fiber); Open-circuit voltage

Abstract To improve the photovoltaic properties of Cu 2 ZnSnS 4 (CZTS) cells, we investigated use novel buffer layer materials. We found that Zn 1− x Sn O y fabricated by atomic deposition functioned as an effective layer. The short-circuit current density increased 10% because a decrease in absorption loss short-wavelength region. With 0.70 0.30 layers, conversion efficiency was 5.7%. reduce interface recombination, thin CdS inserted between ZnSnO and CZTS layers. cells using ZnSnO/CdS double layers showed high open-circuit voltage 0.81 V.