Annealing effects on CsPbI3-based planar heterojunction perovskite solar cells formed by vacuum deposition method

• DOI: 10.7567/jjap.56.04cs11
• Publication Date: 2017-03-24T10:14:25Z
• Authors: Kyosuke Yonezawa; Kohei Yamamoto; Md. Shahiduzzaman; Yoshikazu Furumoto; Keitaro Hamada; Teresa S. Ripolles; Makoto Karakawa; Takayuki Kuwabara; Kohshin Takahashi; Shuzi Hayase; Tetsuya Taima
• Keywords: Photocurrent; Caesium; Perovskite solar cell

Cesium iodide (CsI) is attracting attention as a substitute for organic materials such CH3NH3I. In this work, we fabricated sequential-vacuum-deposited planar heterojunction (PHJ) cesium lead (CsPbI3) perovskite solar cells with enhanced efficiencies by varying the annealing time (0.5, 1, 5, and 10 min). The effect of performance enhancement was investigated function at 350 °C employing hot plate. best-performing device obtained an 1 min, delivered photocurrent density (JSC) 12.06 mA/cm2, voltage (VOC) 0.71 V, fill factor (FF) 0.67, leading to power conversion efficiency (PCE) 5.71% standard AM 1.5G illumination.