Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

• DOI: 10.7567/jjap.57.08rb04
• Publication Date: 2018-06-11T14:14:11Z
• Authors: Yushi Ota; Atsushi Hombe; Ryota Nezasa; Dmitry Yurasov; Alexey Novikov; Mikhail Shaleev; Natalie Baidakova; Elena Morozova; Yasuyoshi Kurokawa; Noritaka Usami
• Keywords: 0103 physical sciences; 01 natural sciences

A high-performance light-trapping structure for Si was fabricated with an etching margin of only ∼1 µm using Ge islands grown by gas-source molecular beam epitaxy as masks. KOH solution containing isopropyl alcohol and HF + H2O2 CH3COOH mixed were used etchants. The reflectance the shown to be comparable that a conventional pyramid texture, which requires larger ∼10 µm. In addition, potential short-circuit current density (p-Jsc) 42.3 mA/cm2 obtained sample after deposition indium tin oxide, confirms is applicable crystalline solar cells thinner wafers.