Long-Term Stabilization of Sense Signals in a Non-Destructive Readout FeRAM by Intentional Modification of the Polarization Hysteresis Curve for Low Voltage Applications

• DOI: 10.7567/ssdm.2003.b-1-4
• Publication Date: 2015-10-29T02:35:21Z
• Authors: T. Yamada; Y. Kato; S. Koyama; Y. Shimada
• Keywords: Ferroelectric RAM; Hysteresis

2003 International Conference on Solid State Devices and Materials,Long-Term Stabilization of Sense Signals in a Non-Destructive Readout FeRAM by Intentional Modification the Polarization Hysteresis Curve for Low Voltage Applications