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ZrO<sub>2</sub> Anti-Ferroelectric Field Effect Transistor for Non-volatile Memory and Analog Synapse Applications

02 engineering and technology 0210 nano-technology
DOI: 10.7567/ssdm.2019.h-3-04 Publication Date: 2021-07-14T02:25:06Z
Abstract Supplemental Material References Cited by
AUTHORS (10)
H. Liu
S. Zheng
G. Han
Y. Xu
Y. Liu
C. Wang
X. Wang
N. Yang
N. Zhong
Y. Hao
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