Shamim Ahmmed

ORCID: 0000-0001-5847-2893
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About
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Research Areas
  • ZnO doping and properties
  • Chalcogenide Semiconductor Thin Films
  • Perovskite Materials and Applications
  • Copper-based nanomaterials and applications
  • Quantum Dots Synthesis And Properties
  • Conducting polymers and applications
  • Ga2O3 and related materials
  • Solid-state spectroscopy and crystallography
  • Inorganic Fluorides and Related Compounds
  • Silicon Nanostructures and Photoluminescence
  • Transition Metal Oxide Nanomaterials
  • Silicone and Siloxane Chemistry
  • Semiconductor materials and interfaces
  • Chemical and Physical Properties of Materials
  • Advanced battery technologies research
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • Evolutionary Algorithms and Applications
  • Fuzzy Logic and Control Systems
  • Nanowire Synthesis and Applications
  • Metaheuristic Optimization Algorithms Research
  • Organic Electronics and Photovoltaics
  • Silicon and Solar Cell Technologies

National Institute for Materials Science
2023-2025

University of Tsukuba
2023-2025

Tsukuba University of Technology
2025

University of Rajshahi
2018-2023

North Bengal International University
2020-2021

United International University
2007

Abstract Tin Sulfide (SnS) is a promising absorber material for solar energy harvesting owing to the high absorption coefficient. Here, novel inverted planar heterostructure of SnS based cell (ITO/NiO X /SnS/ZnO/Al) has been proposed better efficiency among different electron transport layers (ETLs), PCBM, C 60 , CeO and ZnO. The performance was theoretically studied by Solar Cell Capacitance Simulator (SCAPS) software. Initially, we have observed device with ETL materials find material....

10.1088/1402-4896/accb13 article EN Physica Scripta 2023-04-06

This article reports a solution-processed synthesis of copper oxide (CuxO) to be used as potential photocathode for solar hydrogen production in the water-splitting system. CuxO thin films were synthesized through reduction iodide (CuI) by sodium hydroxide (NaOH), which deposited spin coating method from CuI solution polar aprotic solvent (acetonitrile). The phase and crystalline quality prepared at various annealing temperatures investigated using techniques. X-ray diffraction energy...

10.1021/acsomega.0c02754 article EN cc-by ACS Omega 2020-09-24

In this research, a heterostructure of the CuO-ZnO-based solar cells has been fabricated using low-cost, earth-abundant, non-toxic metal oxides by low-temperature spin coating technique. The device based on CuO-ZnO without hole transport layer (HTL) suffers from poor power conversion efficiency due to carrier recombination surface CuO and bad ohmic contact between electrode absorber layer. main focus research is minimize mentioned shortcomings novel idea introducing solution-processed...

10.1021/acsomega.1c00678 article EN cc-by-nc-nd ACS Omega 2021-05-04

In the planar heterostructure of perovskite-based solar cells (PSCs), tin oxide (SnO2) is a material that often used as electron transport layer (ETL). SnO2 ETL exhibits favorable optical and electrical properties in PSC structures. Nevertheless, open circuit voltage (VOC) depletion occurs PSCs due to defects arising from high oxygen vacancy on surface deeper conduction band (CB) energy level SnO2. this research, cerium (Ce) dopant was introduced (Ce-SnO2) suppress VOC loss PSCs. The CB...

10.1021/acsami.4c05180 article EN ACS Applied Materials & Interfaces 2024-06-12

To commercialize perovskite solar cells (PSCs), it is crucial to develop cost‐effective, dopant‐free hole transport layers (HTLs) that can be processed at low temperatures. Herein, a small molecular material 4,4′,4′‐Tris[2‐naphthyl(phenyl)amino]triphenylamine (2TNATA) was utilized in inverted PSCs as HTL. The position of the highest occupied orbital energy 2TNATA properly aligned with valence band maximum. Moreover, lower temperatures and shows excellent thermal stability. lead (Pb) on...

10.1002/solr.202500017 article EN cc-by-nc-nd Solar RRL 2025-02-17

Tin–lead (Sn–Pb) mixed perovskite solar cells (PSCs) are promising as bottom subcells in all‐perovskite tandem cells, but the oxidation of Sn 2+ remains challenging for long‐term stability. This study reveals a compositional gradient Sn–Pb films, where excess ions accumulate at surface, intensifying and recombination losses. To address this issue, we introduce PbBr 2 ‐TOAB wet surface treatment strategy during fabrication films. X‐ray photoelectron spectroscopy analysis confirms that...

10.1002/solr.202500225 article EN cc-by-nc-nd Solar RRL 2025-05-19

Wide-bandgap perovskite materials are gaining enormous attention recently, particularly in multijunction photovoltaics. Despite the encouraging development, light-induced phase segregation still impedes their operational stability, primarily due to high content of bromide constituents. Here, we report a bilateral interface design mitigate instability 2.1 eV bandgap all-inorganic CsPbIBr2 solar cells (PSCs)─(1) buried interface: strong chemical interactions occur between nickel oxide (NiOx)...

10.1021/acsami.5c04349 article EN ACS Applied Materials & Interfaces 2025-05-29

Abstract Herein, a novel planar heterostructure (ITO/CeO x /CH 3 NH Pb(I 1–x Cl ) /NiO/Au) of CH -based perovskite solar cell has been designed and numerically investigated. introduced as an absorber layer due to its excellent thermal stability high carrier diffusion length. Inorganic CeO NiO have electron transport (ETL) hole (HTL), respectively, their role in the enhancement efficiency other perovskite-based cells already proven. The influences different physical parameters layer, HTL, ETL...

10.1088/1361-6641/abd266 article EN Semiconductor Science and Technology 2020-12-11

Epitaxial lanthanum fluoride (LaF3) is considered an important and outstanding material for the fabrication of Metal–Insulator–Semiconductor (MIS) capacitive devices. In quest finding a green low-cost scalable technique epitaxial deposition LaF3 thin-film, this article presents investigation on home-made deep eutectic solvent (DES)-based chemical route thin film p-type silicon (p-Si) using spin coating technique. The x-ray diffraction study confirmed p-Si substrate. An almost pinhole-free...

10.1063/5.0039733 article EN cc-by AIP Advances 2021-03-01

Inorganic thin-film solar cell were fabricated by spin-coating using zinc oxide (ZnO) and silicon nanoparticles doped cupric (Si-NPs-CuO) has been reported in this paper. The Si-nanoparticles (Si-NPs) was prepared from Si powder which obtained the sand of Padma river aluminothermic process. presence Si-NPs confirmed Energy Dispersive X-ray (EDX). size distribution determined Dynamic Light Scattering (DLS) technique. For fabrication heterojunction ZnO spin-coated on FTO-coated glass substrate...

10.1109/ic4me2.2018.8465662 article EN 2018 International Conference on Computer, Communication, Chemical, Material and Electronic Engineering (IC4ME2) 2018-02-01

This article presents the investigation on passivation of pore walls porous silicon (PS) with LaF3 using a deep eutectic solvent (DES) based novel chemical route. Spin-coating deposits precursor solution wall PS, and subsequent annealing evaporates DES leaving as passivating layer. Energy dispersive x-ray spectroscopy (EDS) diffraction (XRD) analyses indicated an almost stoichiometric highly crystalline nature deposited LaF3. The surface was uniform crack-free revealed by scanning electron...

10.2139/ssrn.4365923 article EN 2023-01-01

The fabrication of Silicon Nanoparticles (Si-NPs) doped Cupric Oxide (Si-NPs-CuO) thin films and study their optical properties have been presented in this paper. was obtained from the Si powder extracted sand Padma river by mechanical milling. Energy Dispersive X-ray (EDX) on thin-film confirmed presence Si-NPs. size Si-NPs determined Dynamic Light Scattering (DLS) technique. doping CuO with done using simple one-pot synthesis method. Three, five seven layers were deposited glass substrate...

10.1109/ic4me2.2018.8465674 article EN 2018 International Conference on Computer, Communication, Chemical, Material and Electronic Engineering (IC4ME2) 2018-02-01
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