A5017574508- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Electromagnetic Compatibility and Noise Suppression
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
The Ohio State University
2020-2024
Washington State University
2022
Unintentional impurity incorporation in GaN drift layers represents a challenging issue that can limit their potential performance vertical power devices. In this paper, we focus on studying the origins of Fe metal-organic chemical vapor deposition (MOCVD) grown materials. Acting as compensator n-type layers, impurities reduce electron mobility and lowest controllable doping level. Two sources, sample cleaning process growth susceptor, were identified main mechanisms MOCVD process. It was...
We demonstrate edge termination for vertical GaN p-n diodes using step-etched triple-zone junction extension (JTE). The technique was found to yield high breakdown efficiency without degradation of forward characteristics. electric field distribution at various JTE thicknesses simulated, and the experimental results were well matched simulation results. fabricated diode with shows a voltage 550 V corresponding 75%, turn-on 3.1 V, specific ON-resistance 1.3 <inline-formula...
In this Letter, we discuss AlGaN/GaN HEMTs integrated with high permittivity BaTiO3 dielectric to enable enhanced breakdown characteristics. We show that using layers in the gate and drain access regions prevents premature breakdown, leading average fields exceeding 3 MV/cm at a gate-to-drain spacing of 4 μm. The higher power figure merit above 2.4 GW/cm2 devices 6 This work demonstrates electrostatic engineering high-permittivity dielectrics can approaching material field limits.
In this Letter, we demonstrate hybrid GaN lateral Schottky barrier diodes with enhanced breakdown characteristics and a low turn-on voltage. These incorporate in combination high permittivity material beneath the field plate, enabling average fields Average electric up to 2.38 MV/cm were achieved for devices an anode–cathode spacing of 4 μm, while maintaining voltage 0.48 V. contrast, SiNx/AlGaN/GaN control displayed ∼0.7 similar dimensions 0.46 The use high-permittivity dielectric can more...
In this study, the impact of varying thickness Al 2 O 3 interlayer dielectric on electrical characteristics BaTiO /III‐nitride transistors is investigated. findings, it revealed that a minimum 8 nm for layer crucial to maintain high device performance and protect against sputtering‐induced damage during deposition. The fabricated /Al /AlGaN/GaN electron mobility exhibit exceptional properties, including maximum current density 700 mA mm −1 , an on‐resistance 5 Ω mm, I ON / OFF ratio 10 7...
Low-frequency (LF) noise measurements are compared for Schottky-gate AlGaN/GaN heterostructure planar and fin field-effect transistors (FinFETs) as functions of gate voltage measuring temperature. The each device type is consistent with a carrier number fluctuation model. Similar effective defect-energy Eo distributions derived the two architectures from excess drain-voltage noise-power spectral density vs temperature 80 to 380 K. Defect- and/or impurity-related peaks observed in inferred...
We demonstrate a method to achieve selectively patterned Mg-doped GaN layers using hydrogen drive-in through plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) films. Activated were deactivated by PECVD SiNx films with low-temperature annealing and showed high-resistive behavior. Spatially resolved photoluminescence measurements used optically verify the deactivation of Mg acceptors distinct features corresponding activated in GaN. The suggested here provides simple...