Woo‐Sik Kim

ORCID: 0000-0001-6876-4726
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About
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Research Areas
  • Crystallization and Solubility Studies
  • Fatigue and fracture mechanics
  • Structural Integrity and Reliability Analysis
  • Hydrogen embrittlement and corrosion behaviors in metals
  • Minerals Flotation and Separation Techniques
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Innovative Microfluidic and Catalytic Techniques Innovation
  • Analytical Chemistry and Chromatography
  • Catalytic Processes in Materials Science
  • Crystallography and molecular interactions
  • Acoustic Wave Resonator Technologies
  • Calcium Carbonate Crystallization and Inhibition
  • Freezing and Crystallization Processes
  • nanoparticles nucleation surface interactions
  • Quantum Dots Synthesis And Properties
  • Engineering Applied Research
  • Enzyme Structure and Function
  • Protein purification and stability
  • Non-Destructive Testing Techniques
  • Analytical Chemistry and Sensors
  • Perovskite Materials and Applications
  • Welding Techniques and Residual Stresses
  • Microfluidic and Capillary Electrophoresis Applications
  • Advanced Photocatalysis Techniques
  • Nanomaterials for catalytic reactions

Kyung Hee University
2016-2025

Jeju National University
2024

Korea University
2020-2024

Samsung (South Korea)
2023-2024

National Central University
2022

Korea Gas Corporation (South Korea)
2007-2017

Agency for Defense Development
2007-2015

Samsung (United States)
2014

Government of the Republic of Korea
2014

IMEC
2013

In this paper, we optimize the stack of a 90-nm CMOS-friendly <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm W}\backslash{\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$</tex></formula> conductive-bridging random access memory cell integrated in one-transistor/one-resistor configuration. We show that excellent Cu buffering properties TiW layer inserted at interface make it possible, on one hand, to...

10.1109/ted.2013.2282000 article EN IEEE Transactions on Electron Devices 2013-09-26

In this study, a temperature-insensitive strain sensor that detects only the without responding to temperature was designed. The transport mechanism and associated coefficient of resistance (TCR) poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film were modified through secondary doping with dimethyl sulfoxide (DMSO). Upon DMSO-doping, carrier PEDOT:PSS transitioned from hopping band-like transport, morphological change. At DMSO level, which caused critical point...

10.1039/d2nr05688g article EN Nanoscale 2023-01-01

The adsorption equilibria of water vapor on Al2O3, zeolite 13X, and a X/activated carbon composite (Zeocarbon) were measured by static volumetric method. equilibrium experiments conducted at (293.2, 313.2, 333.1, 353.1) K pressures up to 2.1 kPa for Al2O3 2.3 13X Zeocarbon, respectively. experimental data obtained correlated the Aranovich Donohue (A−D) n-layer BET models.

10.1021/je0201267 article EN Journal of Chemical & Engineering Data 2002-11-02

In this study, non-temperature interference strain gauge sensors, which are only sensitive to but not temperature, developed by engineering the properties and structure from a material perspective. The environmental temperature fluctuations is successfully eliminated controlling charge transport in nanoparticles with thermally expandable polymer substrates. Notably, negative coefficient of resistance (TCR), originates hopping nanoparticle arrays, compensated positive TCR effective surface...

10.1021/acsnano.0c09835 article EN ACS Nano 2021-04-01
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