A5022270177- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- GaN-based semiconductor devices and materials
- Thermal properties of materials
- Gas Sensing Nanomaterials and Sensors
- Boron and Carbon Nanomaterials Research
Sun Yat-sen University
2020-2022
Monoclinic gallium oxide (β-Ga2O3) has attracted much attention from the fields of optoelectronic and electronic devices owing to properties wide bandgap, great breakdown field strength, as well economic advantages low-cost growth large-size single crystals. Here, basic photophysical including absorption (free-carrier band-edge absorption) reflection (phonon polaritons exciton polaritons) differently doped β-Ga2O3 with diverse carrier concentrations are studied in detail. The unpolarized...
Cubic boron phosphide (BP) has the physical advantages of ultra-high hardness, high melting point, and thermal conductivity, which make it greatly potential in device applications under extreme conditions. However, there are still problems about phonon identification BP with a curious phenomenon found Raman spectra isotopic lattice (the small peak natBP almost or completely disappears lattice). Faced this problem, here we report extremely narrow reststrahlen bands natBP, 10BP, 11BP single...
In this letter, amorphous silicon nitride (Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) film grown by inductively coupled plasma chemical vapor deposition (ICPCVD) method is used as the photosensitive layer of deep ultraviolet (DUV) detection, whose thickness and roughness are 200 nm 0.92 nm, respectively. The transverse symmetrical photoconductive detector with interdigital...