A5051881145- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Metal and Thin Film Mechanics
- Photonic and Optical Devices
- Luminescence Properties of Advanced Materials
- Nanowire Synthesis and Applications
- Luminescence and Fluorescent Materials
- ZnO doping and properties
- Photonic Crystals and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Perovskite Materials and Applications
- Advanced Fiber Laser Technologies
- Plasmonic and Surface Plasmon Research
Tsinghua University
2017
Peking University
2014-2015
The GaN-based light emitting diodes (LEDs) have a great potential for visible communication (VLC) due to their ubiquitous application in general lighting, but the modulation bandwidth of conventional c-plane LEDs is limited by carrier recombination rate InGaN quantum wells (QWs) polarization-field-induced confined Stark effect (QCSE). Furthermore, high on sapphire substrates can only be achieved at current densities. Here, blue with ultra-thin QWs (1nm) and GaN barriers (3nm) are grown...
We theoretically investigate the optical properties of conventional, normal (type A) parabolic and novel B) InGaN quantum well (QW) for blue light emitters. Two specially designed active layer structures by parabolic‐shaped QW are proposed, characteristics these two calculated compared to those conventional structures. The electron–hole wavefunction overlap ( Γ e–hh ) type‐B QWs is 2.8 times (69.6%) that in (24.8%), spontaneous emission rate ninefold QWs. transparency carrier density much...
Photon upconversion with transformation of low-energy photons to high-energy has been widely studied and especially applied in biomedicine for sensing, stimulation, imaging. Conventional materials rely on nonlinear luminescence processes, suffering from long decay lifetime or high excitation power. Here, we present a microscale, optoelectronic infrared-to-visible device design that can be excited at low power (1–100  mW/cm2). By manipulating geometry, illumination position,...
The pulse working of gain-switched laser diodes (LDs) provides more power than continuous-wave (CW) emission. Similar to the CW emission, emission affects by structural properties and different loss mechanisms active region. In this paper, both these parameters are investigated in InGaN-based LDs, numerically. It is found that thickness InGaN quantum well (QW) have an influence on transient pulse, at high enough injection currents, thinner QW with a higher mode can produce stronger peak...
Introducing a thin InGaN interlayer with relatively lower indium content between the quantum well (QW) and barrier results in step-like InxGa1−xN/GaN potential on one side of QW. This change active region leads to significant shift photoluminescence (PL) electroluminescence (EL) emissions longer wavelength compared conventional QW based light-emitting diodes. More importantly, an improvement against efficiency droop enhancement light output power at high-current injection are observed...
Abstract A dual‐wavelength LED sample with novel sandwiched structure in high‐In‐content MQWs is studied by temperature dependent photoluminescence (TDPL) and the abnormal dependence of emission intensity obtained. The which contains staggered quantum wells an ultra‐thin InN interlayer shows better luminescence property than reference has conventional wells. Under 325 nm continuous wave laser excitation exhibits unexpected increasing as goes up from 140 K to 220 reaches its maximum at K....