A5057483626- Advanced Surface Polishing Techniques
- Advanced machining processes and optimization
- Diamond and Carbon-based Materials Research
- Advanced materials and composites
- Metal and Thin Film Mechanics
- Adhesion, Friction, and Surface Interactions
- Tribology and Lubrication Engineering
- Integrated Circuits and Semiconductor Failure Analysis
- Tunneling and Rock Mechanics
- Force Microscopy Techniques and Applications
- High-Temperature Coating Behaviors
- 2D Materials and Applications
- Advanced ceramic materials synthesis
- Advanced Machining and Optimization Techniques
- Advancements in Battery Materials
- Surface Modification and Superhydrophobicity
- Corrosion Behavior and Inhibition
- Advanced Battery Materials and Technologies
- Erosion and Abrasive Machining
- Laser Material Processing Techniques
- Titanium Alloys Microstructure and Properties
- Electrocatalysts for Energy Conversion
- Electrodeposition and Electroless Coatings
- Extraction and Separation Processes
- Industrial Technology and Control Systems
Henan Institute of Science and Technology
2013-2024
Northeastern University
2023
University of Electronic Science and Technology of China
2018
Xinxiang Medical University
2017
Henan Normal University
2017
Henan Forestry Vocational College
2002
Na2CO3-1.5 H2O2, KClO3, KMnO4, KIO3, and NaOH were selected for dry polishing tests with a 6H-SiC single crystal substrate on polyurethane pad. The research results showed that all the solid-phase oxidants, except NaOH, could decompose to produce oxygen under frictional action. After five was found surface of SiC, indicating oxidants can have complex tribochemical reactions SiC. Their reaction products are mainly SiO2 (SiO2)x. Under action friction, due high flash point temperature...
Abstract Aiming at the difficulties of low efficiency and high cost during ultra-precision machining monocrystalline silicon carbide (SiC) substrates, a new type UV-cured polishing pad (UV-CPD) for friction chemical mechanical (TCMP) SiC is proposed. Four different types modified resin blends were prepared, four UV-CPD produced by light curing technology. Hardness, elastic modulus, coefficient used as evaluation indicators to compare properties with commercial polyurethane pads (CPPD). TCMP...
The influences of the polishing slurry composition, such as pH value, abrasive size and its concentration, dispersant oxidants, rotational velocity platen carrier pressure, on material removal rate SiC crystal substrate (0001) Si a C surface have been studied based alumina in chemical mechanical (CMP). results proposed by our research here will provide reference for developing slurry, optimizing process parameters, investigating mechanism CMP substrate.
Micro-end-milling is a cutting technology that removes redundant material from machined workpieces by small-diameter end mills, and widely used to manufacture miniature complex parts. During micro-end-milling, the vibration caused weak tool rigidity high spindle speed known as key factor for decreasing quality accelerating failure. This study reports on experiments of micro-end-milling straight groove AISI 1045 steel. The waveform characteristics acceleration were revealed, relationship...
In this paper, the tribochemical reaction mechanism between solid powder and 6H-SiC substrate was investigated. White light interferometer used to detect surface roughness, FESEM observe characteristics, EDS elements XRD components. The of reduced iron powder, anhydrous sodium carbonate deionized water with analysed by detection results. It is found that react form a soft interfacial transition layer which can be removed. removal rate highest at 191 nm h–1. quality decreases after polishing...