A5100750002- Semiconductor materials and devices
- Laser-induced spectroscopy and plasma
- Ferroelectric and Negative Capacitance Devices
- Laser Design and Applications
- Interconnection Networks and Systems
- Parallel Computing and Optimization Techniques
- Plasma Diagnostics and Applications
- Photonic and Optical Devices
- Advanced Memory and Neural Computing
- Low-power high-performance VLSI design
- 3D IC and TSV technologies
- Microwave Engineering and Waveguides
- Photovoltaic System Optimization Techniques
- Manufacturing Process and Optimization
- Gold and Silver Nanoparticles Synthesis and Applications
- Spectroscopy Techniques in Biomedical and Chemical Research
- Dust and Plasma Wave Phenomena
- Thin-Film Transistor Technologies
- Advanced Data Storage Technologies
- Machine Learning and ELM
- Organic Electronics and Photovoltaics
- Electronic Packaging and Soldering Technologies
- Algorithms and Data Compression
- Energetic Materials and Combustion
- Heat Transfer and Optimization
National NanoFab Center
2023-2024
Chungnam National University
2023
Korea Institute of Materials Science
2021
Korea Electronics Technology Institute
2017
Kyung Hee University
2014
Chungbuk National University
2003-2008
The Ohio State University
1999-2003
Kyungil University
2003
Abstract In this study, we developed the CMOS process-compatible Ta2O5-based ReRAM with improved uniformity through 6% nitrogen (N) doping. The N-doped TaOX layer, acting as an oxygen reservoir, helped control stochastic behavior of conductive filaments. As a result, device showed 42% and 46% reduction in current variation for low resistance state (LRS) high (HRS), respectively, compared to undoped device. Additionally, set voltage (VSET) decreased by 50%, marking significant improvement...
In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial (S-COV) very simple time-saving compared with conventional TSV. structure, metal-coated silicon-pole used as vertical interconnect instead of fully filled metal via. depth the fabricated S-COV 120 μm minimum diameter signal core dielectric gap to ground are 40 20 μm, respectively. well-matched condition, measured insertion loss single 0.053 dB at 10 GHz.
1 Gbit SOI DRAM with a body-contacted (BC) MOSFET structure is successfully realized for the first time. The fabricated 1G has fully compatible process 0.17 /spl mu/m bulk CMOS technology except isolation process. key advantage of BC-SOI freedom from floating-body effect, since body-potential increase can be suppressed by well contact through remaining thin-silicon film beneath field oxide. several advantages, such as relatively high punchthrough voltage, drain-to-source breakdown voltage...
Asynchronous design methods are known to have higher performance in power consumption and execution speed than synchronous ones because they just needs activate the required module without feeding clock entire system. In this paper, we propose an asynchronous processor, A8051, compatible with Intel 8051, which is a challenge for pipelined CISC type microcontroller. The A8051 has special features such as optimal instruction scheme that eliminates bubble state, variable length handling...
BCH (Bose-Chaudhuri-Hocquenghem) coding is very useful to correct a small bit error. But the code length n longer such as game program stored in MLC (multi-level cell) flash memory, decoding circuits takes lot of computation time. This paper presents parallel architecture aiming speed up that guarantees 2-bit error correction. It allows one word data can be fed into decoder at time and decoded parallel. The experimental results show proposed (4122, 4096, 2) runs about 7.5 times faster than...
In this article, we have demonstrated a simple 200-mm Si CMOS process-based integrated passive device (IPD) stack for millimeter-wave (mmW) monolithic 3-D (M3D) integration. By developing double chemical mechanical polishing (CMP) technique the final intermetal dielectric (IMD) process, an rms value of less than 1 nm top-surface roughness IPD was achieved, resulting in uniform integration 100-nm-thick active layer InGaAs high-electron-mobility transistor (HEMT) on stack. The included...
Typical trouble patterns in solar thermal systems include working fluid leakage and freezing other than breakdown of pump. A sensor for measuring electric resistance was developed installed at the top collector piping order to check fault system. Working level pipe determined by from a sensor. On base this, it confirmed that diagnoses fluid. Electric propylene glycol aqueous solution measured range <TEX>$0{\sim}70^{\circ}C$</TEX> 0~40% concentration. The response surface analysis performed...
In this paper, we present a new mixture RZ/NRZ dual-rail transmission method to reduce the power consumption associated with data switching and overcome zero overhead of RZ decoding scheme. The encoding is useful detect completion signal each module in asynchronous circuits using DI delay model. However, scheme gives some disadvantages, large chip area higher than single-rail counterparts. proposed reduces activities circuit significantly introducing NRZ on one rail, which leads lower...