A5080215547- Quantum and electron transport phenomena
- Magnetic properties of thin films
- Magnetic Field Sensors Techniques
- Topological Materials and Phenomena
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Physics of Superconductivity and Magnetism
- Advanced Condensed Matter Physics
- Semiconductor materials and devices
- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Magnetic and transport properties of perovskites and related materials
- Semiconductor Quantum Structures and Devices
- Atomic and Subatomic Physics Research
- Advanced Chemical Sensor Technologies
- Quantum, superfluid, helium dynamics
- Advanced Physical and Chemical Molecular Interactions
- Mechanical and Optical Resonators
- ZnO doping and properties
- Graphene research and applications
- Rare-earth and actinide compounds
- Non-Destructive Testing Techniques
- 2D Materials and Applications
- Quantum optics and atomic interactions
- Electronic and Structural Properties of Oxides
CIC nanoGUNE
2020-2024
Korea Institute of Science and Technology
2014-2018
Korea University
2014-2017
Abstract As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based offering scaling potential, at cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution limited device-level results. Here, we demonstrate voltage-based reading nanodevices room temperature, enabled by exchange coupling between multiferroic...
Interfaces, such as grain boundaries in a solid material, are excellent regions to explore novel properties that emerge the result of local symmetry-breaking. For instance, at interface layered-chalcogenide potential reconfiguration atoms can lead significant modification electronic because their complex atomic bonding structure. Here, we report experimental observation an electron source 60° twin Bi2Te3, representative material. First-principles calculations reveal interatomic distance...
The spin field-effect transistor, an essential building block for information processing, shows promise energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low injection and detection efficiencies. We demonstrate that this obstacle can be overcome by utilizing direct inverse Hall effects detection, respectively, without ferromagnetic component. output voltage our all-electric transistor is about two orders magnitude larger than previously...
Abstract Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions (SCCs) via either the inverse Hall effect or Rashba–Edelstein (IREE) can be achieved by proximity with an adjacent spin–orbit coupling (SOC) material. Lateral valve devices, made up of a bar and ferromagnets, are best suited such studies. Here, we report signals mimicking IREE measured pristine possessing negligible...
Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents functional devices memory logic such as torque switching magnetic memories or magnetic-state reading spin-based logic. Disentangling bulk (spin Hall effect) from interfacial (inverse galvanic contribution been common issue to properly quantify spin-charge these systems, being case Au paradigmatic. Here, we obtain large at highly conducting Au/Cu interface...
One of the major obstacles to realizing spintronic devices such as MESO logic is small signal magnitude used for magnetization readout, making it important find materials with high spin-to-charge conversion efficiency. Although intermixing at junction two a widely occurring phenomenon, its influence on material characterization and estimation efficiencies are easily neglected or underestimated. Here, we demonstrate all-electrical in BixSe1-x nanodevices show how efficiency can be...
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized design materials selection. In these devices, interfaces are crucial elements as they prohibit or promote spin flow in a device well possess spin-orbit coupling resulting interfacial SCI. Therefore, investigation of spin-orbitronic important. Here, we study the origin SCI Py/Cu/W lateral valve quantify its efficiency. An exhaustive characterization interface between Cu W...
We present the first experimental realization of a magnetoelectric spin-orbit (MESO) logic device at room temperature. Two states are determined by magnetization direction nanostructured CoFe element, which is switched BiFeO3 layer (WRITE) and detected through spin-to-charge conversion effect in Pt element (READ).
Using the Shubnikov−de Haas oscillation measurement, g-factor of carriers in a strong Rashba system is observed. To determine InAs quantum well channel with effect, magnetic fields are simultaneously applied along in-plane direction and perpendicular direction. The field drives conductance for measuring spin orbit interaction parallel to interacts effect modifies intrinsic parameter. total inside combination field, so modification parameter gives value ∼13 our system.
To evaluate Fermi surface distortion induced by interaction between Rashba and Zeeman effects, the channel resistance in an InAs quantum well layer is investigated with in-plane magnetic field transverse to current direction. In magnetoresistance curve, critical point occurs at ∼3.5 T, which approximately half of independently measured field. get insight into correlation curve strength, conductivity calculated using a two-dimensional free-electron model relaxation time approximation. The...
The applied field induced Zeeman effect interferes with Rashba in a quantum well system. angle dependence of Shubnikov-de Haas oscillation shows that the in-plane term changes intrinsic spin splitting. total effective spin-orbit interaction parameter is determined by vector sum and field.
The development of spin-orbitronic devices, such as magnetoelectric spin-orbit logic calls for materials with a high resistivity and spin-charge interconversion efficiency. One the most promising candidates in this regard is sputtered ${\mathrm{Bi}}_{x}{\mathrm{Se}}_{1\ensuremath{-}x}$. Although there are several techniques to quantify interconversion, reported values date ${\mathrm{Bi}}_{x}{\mathrm{Se}}_{1\ensuremath{-}x}$ have often been overestimated due spurious effects related local...