A self-consistent, one-dimensional solution of the Schrödinger and Poisson equations is obtained using finite-difference method with a nonuniform mesh size. The use proper matrix transformation allows preservation symmetry discretized equation, even size, therefore reducing computation time. This very efficient in finding eigenstates extending over relatively large spatial areas without loss accuracy. For confirmation accuracy this method, comparison made exactly calculated GaAs/AlGaAs...

This paper presents an experimental demonstration of a basic cell the quantum-dot cellular automata, transistorless approach to computation that addresses issues device density, interconnection, and power dissipation. The under study was composed four metal dots, connected with tunnel junctions capacitors, operated at <50 mK. Operation evidenced by switching single electron between output dots controlled in input demonstrating nonlinear, bistable response.

A functioning logic gate based on quantum-dot cellular automata is presented, where digital data are encoded in the positions of only two electrons. The consists a cell, composed four dots connected ring by tunnel junctions, and single-dot electrometers. device operated applying inputs to gates cell. AND OR operations verified using electrometer outputs. Theoretical simulations output characteristics excellent agreement with experiment.

We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$(f_{T})$</tex></formula> of 370 GHz. The HEMT without back barrier exhibits an extrinsic transconductance Notation="TeX">$(g_{\rm m.ext})$</tex></formula> 650 mS/mm and on/off ratio Notation="TeX">$10^{6}$</tex></formula>...

The amine functionality of the linker on dinuclear complex [trans-Ru(dppm)(2)(Ctbd1;CFc)(NCCH(2)CH(2)NH(2))][PF(6)] reacts with Si-Cl bonds a chlorinated, highly B doped Si (111) surface to yield Si-N surface-complex bonds. bound is constrained near vertical orientation by chain length as confirmed variable angle XPS. Oxidation ferrocenium ion or electrochemically generates stable, biased Fe(III)-Ru(II) mixed-valence surface. Characterization array complexes spectroscopic well...

We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the sheet concentration ns≈1013 cm−2) grown on conducting 6H–SiC substrates temperature range T=0.3–300 K. The mobility SiC was higher than those sapphire substrates, especially at cryogenic temperatures. highest measured Hall room μH=2019 cm2/V s. At low temperatures, increased approximately five times and saturated below 10 K μH=10250 experimental results are compared with calculations accounting...

Having a drain current density of 1.9 A/mm, peak extrinsic transconductance 800 mS/mm (the highest reported in III-nitride transistors), <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ft</i> / xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> 70/105 GHz, and xmlns:xlink="http://www.w3.org/1999/xlink">V</i> xmlns:xlink="http://www.w3.org/1999/xlink">br</sub> 29 V, 150-nm-gate...

The single particle tunneling in a vertical stack consisting of monolayers two-dimensional semiconductors is studied theoretically and its application to novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) proposed described. current calculated by using formalism based on the Bardeen's transfer Hamiltonian, including semi-classical treatment scattering energy broadening effects. misalignment between two 2D materials also found influence magnitude...

Experimental studies are presented of a binary wire based on the quantum-dot cellular automata computational paradigm. The consists capacitively coupled double-dot cells charged with single electrons. polarization switch caused by an applied input signal in one cell leads to change adjacent and so down line, as falling dominos. Wire was measured using islands electrometers. results very good agreement theory confirm there no metastable states wire.

We report on the measurements of electron mobility in modulation-doped Al0.2Ga0.8N–GaN heterostructures grown sapphire, conducting 6H–SiC, and insulating 4H–SiC substrates as a function sheet density, ns, at heterointerface wide temperature range. The increases with an increase ns up to approximately 1×1013 cm−2 decreases further ns. This is explained by spillover high values from two-dimensional states AlGaN/GaN into delocalized doped GaN channel. maximum Hall excess 2000 cm2/V s room 11...

Quantum-dot cellular automata (QCA) is a digital logic architecture that uses single electrons in arrays of quantum dots to perform binary operations. A QCA latch an elementary building block which can be used build shift registers and devices for clocked architectures. We discuss the operation register present analysis types properties errors encountered their operation.

We present the experimental characterization of a leadless (floating) double-dot system and quantum-dot cellular automata cell, where aluminum metal islands are connected to environment only by capacitors. Here, single electron charge transfer can be accomplished exchange an between dots. The state dots is monitored using configured as electrometers. show improvements in cell performance relative leaded dots, discuss possible implications our design logic implementation.

A bstract : Quantum‐dot cellular automata (QCA) is a scheme for molecular electronics in which information transmitted and processed through electrostatic interactions between charges an array of quantum dots. QCA wires, majority gates, clocked cell operation, (recently) true power gain cells has been demonstrated metal‐dot prototype system at cryogenic temperatures. Molecular offers very high device densities, low dissipation, ways to directly integrate sensors with logic memory elements....

An introduction to the operation of quantum-dot cellular automata is presented, along with recent experimental results. Quantum-dot (QCA) a transistorless computation paradigm that addresses issues device density and interconnection. The basic building blocks QCA architecture, such as AND, OR, NOT are presented. four-dot cell two electrometers. dots metal islands, which coupled by capacitors tunnel junctions. improved design presented in all four this confirmed externally controlled...

Abstract We discuss novel nanoelectronic architecture paradigms based on cells composed of coupled quantum-dots. Boolean logic functions may be implemented in specific arrays representing binary information, the so-called quantum-dot cellular automata (QCA). Cells also viewed as carrying analogue information and we outline a network-theoretic description such nonlinear networks (Q-CNN). In addition, possible realizations these structures variety semiconductor systems (including GaAs/AlGaAs,...

Two-dimensional, self-consistent solutions of the Schrödinger and Poisson equations are used to find electron states in GaAs/AlGaAs quantum well wires. Both deep shallow mesa structures simulated. Our results show that while these capable providing single occupied subband wide energy separations needed for a true wire, process tolerances allowed very small, on order 200 Å width variation. Cutoff widths calculated 1000 2100 mesa. The agreement with experimental is good mesa, but poor This...

Lattice-matched depletion-mode InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on a SiC substrate were fabricated, for the first time, with dielectric-free passivation (DFP) process in which device access region was treated by O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ar plasma. Similar to dielectric using SiN and Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , plasma treatment can effectively shorten...

We report on 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency ( f T ) of 400 GHz. Although the high drain-induced barrier lowering (DIBL) value is indicative significant short-channel effects, more than seven orders magnitude in on/off ratio was observed. The result minimized parasitic effects and at expense low power MAX ). gate length dependence temperature were also measured.

We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) as ferroelectric (FE) dielectric in metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's HZO thickness down 5 nm exhibit consistent switching behavior slope (SS...

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{In}_{0.13}\hbox{Al}_{0.83}\hbox{Ga}_{0.04}\break\hbox{N/AlN/GaN}$</tex> </formula> heterostructure SiC substrate were fabricated. The 66-nm-long gate device shows dc drain current density of 2.1 A/mm, peak extrinsic transconductance 548 mS/mm, and record gain...

Teramac is a large custom computer which works correctly despite the fact that three quarters of its FPGAs contain defects. This accomplished through unprecedented use defect tolerance, substantially reduces Teramac's cost and permits it to have an unusually complex interconnection network. tolerates defective resources, like gates wires, are introduced during manufacture other components, assembly system. We developed methods precisely locate User designs mapped onto system by completely...

A device representing a basic building block for clocked quantum-dot cellular automata architecture is reported. Our consists of three floating micron-size metal islands connected in series by two small tunnel junctions where the location an excess electron defined electrostatic potentials on gates capacitively coupled to islands. In this configuration, middle dot acts as adjustable Coulomb barrier allowing control charge state device. Charging diagrams show existence several operational...

trans-[(H(2)NCH(2)CH(2)C triple bond N)(dppe)(2)Ru(C C)(6)Ru(dppe)(2)(N CCH(2)CH(2)NH(2))][PF(6)](2), 2[PF(6)](2), a derivative of trans-[Cl(dppe)(2)Ru(C C)(6)Ru(dppe)(2)Cl] functionalized for binding to silicon substrate, has been prepared and characterized spectroscopically, electrochemically, with solid state, single-crystal structure determination. Covalent via reaction one amine group boron-doped, smooth Si-Cl substrate is verified by XPS measurements surface electrochemistry. Vertical...