A5025980491- Solid-state spectroscopy and crystallography
- Advanced Semiconductor Detectors and Materials
- Perovskite Materials and Applications
- Photonic and Optical Devices
- Chalcogenide Semiconductor Thin Films
- Luminescence Properties of Advanced Materials
- Photonic Crystals and Applications
- Optical properties and cooling technologies in crystalline materials
- Crystal Structures and Properties
- Gas Sensing Nanomaterials and Sensors
- Radiation Detection and Scintillator Technologies
- Nonlinear Optical Materials Research
- Photorefractive and Nonlinear Optics
- Analytical Chemistry and Sensors
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Semiconductor Lasers and Optical Devices
- Optical Coatings and Gratings
- Ferroelectric and Piezoelectric Materials
- Acoustic Wave Resonator Technologies
- Advanced Photonic Communication Systems
- X-ray Diffraction in Crystallography
- Advanced Chemical Sensor Technologies
- Quantum Dots Synthesis And Properties
- Crystallization and Solubility Studies
Harbin Engineering University
2023-2024
Northwestern University
2015-2024
Chinese Academy of Sciences
2019-2024
University of Science and Technology of China
2024
China Three Gorges University
2013-2023
Nanjing University of Science and Technology
2023
Central South University
2023
State Key Laboratory of Vehicle NVH and Safety Technology
2023
Tsinghua University
2023
North China Electric Power University
2023
The synthesis, crystal growth, and structural optoelectronic characterization has been carried out for the perovskite compound CsPbBr3. This is a direct band gap semiconductor which meets most of requirements successful detection X- γ-ray radiation, such as high attenuation, resistivity, significant photoconductivity response, with detector resolution comparable to that commercial, state-of-the-art materials. A phase transition occurs during growth at higher temperature does not seem affect...
Gamma-ray detection and spectroscopy is the quantitative determination of their energy spectra, critical value critically important in diverse technological scientific fields. Here we report an improved melt growth method for cesium lead bromide a special detector design with asymmetrical metal electrode configuration that leads to high performance at room temperature. As-grown centimeter-sized crystals possess extremely low impurity levels (below 10 p.p.m. total 69 elements) detectors...
The ternary compounds $\mathrm{CsPb}{X}_{3}$ ($X=\mathrm{Br}$ or Cl) have perovskite structures that are being considered for optical and electronic applications such as lasing gamma-ray detection. An above-band-gap excitonic photoluminescence (PL) band is seen in both compounds. emission peak centered at 2.98 eV, $\ensuremath{\sim}0.1$ eV above the room-temperature gap, observed $\mathrm{CsPbC}{\mathrm{l}}_{3}$. thermal quenching of luminescence well described by a two-step model, yielding...
Amorphous carbon nanotubes (ACNTs) with diameters in the range of 7–50 nm were used as absorber materials for electromagnetic waves. The wave absorbing composite films prepared by a dip-coating method using uniform mixture rare earth lanthanum nitrate doped ACNTs and polyvinyl chloride (PVC). microstructures ACNT/PVC composites characterized transmission electron microscope X-ray diffraction their properties measured vector-network analyzer. experimental results indicated that are superior...
Solution-processed perovskites are promising for hard X-ray and gamma-ray detection, but there limited reports on their performance under extremely intense X-rays. Here, a solution-grown all-inorganic perovskite CsPbBr3 single-crystal semiconductor detector capable of operating at ultrahigh flux 1010 photons s-1 mm-2 is reported. High-quality single crystals fabricated into detectors with Schottky diode structure eutectic gallium indium/CsPbBr3 /Au. A high reverse-bias voltage 1000 V (435...
This contribution details the synthesis and chemical/physical characterization of a series unconventional twisted pi-electron system electro-optic (EO) chromophores. Crystallographic analysis these chromophores reveals large ring-ring dihedral twist angles (80-89 degrees) highly charge-separated zwitterionic structure dominating ground state. NOE NMR measurements angle in solution confirm that solid-state twisting persists essentially unchanged solution. Optical, IR, spectroscopic studies...
Semiconductor materials for efficient hard radiation detection are identified by combining a powerful chemical concept called dimensional reduction and precise theoretical electronic structure calculations. After more than 50 years of research development in the field, this constitutes significant step forward search new detector materials. Detailed facts importance to specialist readers published as "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They...
Halide perovskites exhibit remarkably high-performance as semiconductors compared to conventional materials because of an unusually favorable combination optoelectronic properties. We demonstrate here that solution-grown single-crystals organic–inorganic hybrid perovskite CH3NH3PbI3 (MAPbI3), implemented in a Schottky-type device design, can produce outstanding hard radiation detectors with high spectral response and low dark current for the first time. MAPbI3 detector achieves excellent...
We have investigated the defect perovskites A3M2I9 (A = Cs, Rb; M Bi, Sb) as materials for radiation detection. The phase purity of Bridgman-grown single crystals was confirmed via high-resolution synchrotron X-ray diffraction, while density functional theory calculations (DFT) show surprisingly dispersive bands in out-of-plane direction these layered materials, with low effective masses both holes and electrons. Accordingly, each four showed response to 241Am α-particle irradiation hole...
The detection of γ-rays at room temperature with high-energy resolution using semiconductors is one the most challenging applications. presence even smallest amount defects sufficient to kill signal generated from which makes availability detectors a rarity. Lead halide perovskite exhibit unusually high defect tolerance leading outstanding and unique optoelectronic properties are poised strongly impact applications in photoelectric conversion/detection. Here we demonstrate for first time...
Nanocomposites with hierarchical pore structure hold great potentials for applications in the field of microwave-absorbing materials because their lightweight and high-efficiency absorption properties. Herein, M-type barium ferrite (BaM) ordered mesoporous (M-BaM) is prepared via a sol-gel process enhanced by mixed anionic cationic surfactants. The surface area M-BaM almost ten times compared BaM together 40% reflection loss enhancing. Then compounded nitrogen-doped reduced graphene oxide...
Nonlinear optics: Twisted π-electron system electrooptic (EO) chromophores with exceptional molecular hyperpolarizabilities (−488 000×10−48 esu at 1907 nm) were designed and synthesized. Crystallographic analysis reveals large twist angles a highly charge-separated zwitterionic ground state. Experiments on poled host–guest polymers containing these show them to be promising candidates for EO applications. Supporting information this article is available the WWW under...
We report that the chalcohalide compound Tl(6)SeI(4) is a promising material for efficient X-ray and γ-ray detection. This has higher figure of merit than current state-of-the-art room-temperature operation, Cd(0.9)Zn(0.1)Te (CZT). have synthesized high-quality single-crystalline wafers with detector-grade resistivities good carrier transport both electrons holes. demonstrate pulse height spectra recorded using Co-57 radiation show an energy resolution matching commercial CZT detector material.
This letter reports enhanced performance of quantum dots sensitized solar cells by selectively deposition an insulating SiO2 layer over the (QDs) mesoporous TiO2 photoanode. The incident photon to current conversion efficiency CdS/CdSe QDs cosensitized cell with coating can reach 83%. A power 2.05% was obtained.
The wide-band-gap semiconductor thallium gallium selenide (TlGaSe2) is promising for X-ray and γ-ray detection. In this study, the synthesis crystal growth of semiconducting TlGaSe2 was accomplished using a stoichiometric combination TlSe, Ga, Se modified Bridgman method. These large detector-grade crystals can be synthesized cut to dimensions appropriate detector. have mirror-like cleaved surfaces are transparent red, in agreement with band gap 1.95 eV observed absorption measurements....